Nonlinear optics and optoelectronics Lab - Lorenzo Colace

Lorenzo Colace
	Room n°48 Department of Electronic Engineering University of Rome "Roma Tre" Via della Vasca Navale, 84 - 00146 - Roma - Italy tel. +39 06 5733 7068 e-mail: colace@uniroma3.it
Curriculum Vitae Lorenzo Colace (b. in Rome on 9/27/1965) received in 1992 his MSc ("Laurea") in Electronic Engineering from the University of Rome "La Sapienza", discussing a thesis on analysis and modeling of chaotic dynamics. In 1997 he completed his PhD at the University "Roma Tre" defending a dissertation on Silicon-Germanium heterostructures for near-infrared detection. He is currently a Research Scientist with the Department of Electronic Engineering at the University "Roma Tre", involved in design, fabrication and characterization of Silicon integrated photodetectors for the near infrared and parametric effects for all-optical signal processing. Dr. Colace is a member of the Institute of Electrical and Electronic Engineers (IEEE) and the National Institute for the Nuclear Physics (INFN).
Teaching Electronics I Precision Analog Electronics
Publications 2010 Germanium on insulator near-infrared photodetectors faricated by layer transfer Thin Solid Films 518, 2501 (2010) 2009 Analysis of temperature dependence of Ge-on-Si p-i-n photodetectors Physica E 41, 1086-1089 (2009) Guided-wave photodetectors in germanium on SOI optical chips Physica E 41, 1090-1093 (2009) Guided-wave photodetectors in Germanium on optical chips in Silicon-On-Insulator J. Europ. Opt. Soc. Rap. Public. 4, 09030 (2009) Germanium-on-glass near-infrared detectors Electron. Lett. 45, 994 (2009) 2008 Ge-on-Si photodetectors for optical receivers Int. J. Microw. Opt. Techn. 3 (3), 404-11 (2008) Temperature-Dependence of Ge on Si p–i–n Photodetectors J. Lightwave Techn. 26, 2211-2214 (2008) Near-Infrared p-i-n Ge-on-Si Photodiodes for Silicon Integrated Receivers J. Lightwave Techn. 26, 2954-2959 (2008) Near-infrared absorption of Germanium thin films on Silicon Appl. Phys. Lett. 93, 111115 (2008) 2007 Near-infrared camera in polycrystalline germanium integrated on complementary-metal-oxide semiconductor electronics Appl. Phys. Lett. 90, 011103 (2007) A near infrared digital camera in polycrystalline Germanium integrated on Silicon IEEE J. Quantum Electron. 43, 311-315 (2007) Thin film Germanium on CMOS Silicon electronics for near infrared imaging Europhoton. 3, 28-30 (2007) Guided-wave frequency doubling in surface periodically poled lithium niobate: competing effects J. Opt. Soc. Am. B 24, 1564-1570 (2007) Germanium near infrared detector on Silicon-on-Insulator Appl. Phys. Lett. 91, 021107 (2007) Low Dark-Current Germanium-On-Silicon Near-Infrared Detectors IEEE Photon. Technol. Lett. 19, 1813 (2007) 2006 Waveguide photodetectors for the near infrared in polycristalline germanium on silicon IEEE Photon. Techn. Lett. 18, 1094-1096 (2006) Ge on Si p-i-n photodiodes operating at 10Gbit/s Appl. Phys. Lett. 88, 101111 (2006) Si-based near infrared photodetectors operating at 10 Gbit/s J. Lumin. 121, 413-416 (2006) 2005 Guided-wave near-infrared detector in polycrystalline Germanium on Silicon Appl. Phys. Lett. 87, 203507 (2005) Monolithic and hybrid near infrared detection and imaging based on poli-Ge photodiode arrays Opt. Mat. 27, 1079-1083 (2005) 2004 Linear array of Si/Ge heterojunction photodetectors monolithically integrated with Silicon CMOS readout electronics IEEE J. Sel. Top. Quantum Electron. 10, 811-815 (2004) Bi-colour spatial solitons in linearly uncoupled planar waveguides J. Opt. B: Quantum Semiclass. Opt. 6, S217-S222 (2004) Low-threshold spatial solitons in reverse-proton-exchanged periodically poled lithium niobate waveguides Opt. Lett. 29, 1778 (2004) Germanium on Silicon for light detection Encyclopedia of Nanoscience and Nanotechnology, Vol. 3, 829-842 (2004) 2003 A germanium photodetector array for the near infrared monolithically integrated with silicon CMOS readout electronics Physica E 16, 614-619 (2003) 2.5 Gbit/s polycristalline germanium on silicon photodetector operating from 1.3 to 1.55 micron Appl. Phys. Lett. 82, 2524-2526 (2003) Spatial optical simultons in nonlinearly coupled planar waveguides Opt. Lett. 28, 1031-1033 (2003) Wavelength stabilizer for telecommunication lasers: design and optimization J. Lightwave Techn. 21, 1749-1757 (2003) 2002 Solid State wavemeter with InGaAsP/InGaAs two-diode heterostructure Electron. Lett. 38, 735-737 (2002) High performance germanium-on-silicon detectors for optical communications Appl. Phys. Lett. 81, 586-588 (2002) Monolithic Integration of Near Infrared Ge Photodetectors with Si CMOS Readout Electronics Appl. Phys. Lett. 80, 3268-3270 (2002) Si-based optoelectronics for communications Mat. Sci. Engin. B89, 2-9 (2002) Wavelength stabilization of semiconductor lasers with a tunable photodetector Appl. Phys. Lett. 80, 3039-3041 (2002) 2001 High performance p-i-n Ge on Si photodetectors for the near infrared: from model to demonstration IEEE Trans. Electron. Dev. 48, 1092-1096 (2001) Near Infrared Waveguide Photodetectors Based On Polycrystalline Ge on SOI Substrates Opt. Mater. 17, 243-246, (2001) High Efficiency Photodetectors Based On High Quality Epitaxial Germanium Grown On Silicon Substrates Opt. Mater. 17, 71-73 (2001) Germanium thin films on silicon for detection of near-infrared light Handbook of Thin Films Materials, ed. H.S. Nalwa, Academic Press, (2001), p.327 2000 Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates Appl. Phys. Lett. 76, 1231-1233 (2000) Near infrared photodetectors based on <100> silicon substrates Phylos. Mag. B 80, 791-797 (2000) A solid-state near infrared spectrum analyzer based on polycrystalline Ge on Si Mat. Sci. Semicon. Proc. 3 , 545-549 (2000) Germanium on Silicon p-i-n photodiodes for the near infrared Electron. Lett. 36, 2095-2096 (2000) 1999 Metal-Ge-Si heterostructures for near infrared light detection J. Vacuum Sci. Tech. B 17, 465-467 (1999) Near infrared Wavemeter in Polycrystalline Germanium on Silicon Electron. Lett. 35, 1549-1551 (1999) Ge-on-Si approaches to the detection of near infrared light IEEE J. Quantum Electron. 35, 1843-1852 (1999) High responsitivity near infrared Ge photodetectors integrated on Si Electron. Lett. 35, 1467-1468 (1999) Advances in the field of poly-Ge on Si near infrared photodetectors Mat. Sci. Eng. B 69-70, 257-259 (1999) 1998 Voltage-tunable near Infrared photodetector: Versatile component for optical communication systems J. Vacuum Sci. Tech. B 16, 2619-2622 (1998) Metal-Semiconductor-Metal Near Infrared Light Detector Based on Epitaxial Ge/Si Appl. Phys. Lett. 72, 3175-3177 (1998) 1997 Ge/Si (001) Photodetector for Near Infrared Light Solid State Phenomena 54, 55-58 (1997) Voltage tunable SiGe photodetector: a novel tool for crypted optical communications through wavelength mixing Appl. Phys. Lett. 70, 3194-3196 (1997)