Ge on Si p-i-n photodiodes operating at 10Gbit/s
L. Colace, M. Balbi, G. Masini, G. Assanto, H.-C. Luan and L.C. Kimerling
Appl. Phys. Lett. 88, 101111 (2006)
Abstract:
We report on fast p-i-n photodetectors operating in the near infrared and realized in pure germanium on silicon. The diodes were fabricated by chemical vapor deposition at 600 °C without affecting the crystal quality and allowing the integration with standard silicon processes. We demonstrate responsivities of 0.4 and 0.2 A/W at 1.3 and 1.55 µm, respectively, as well as operation at 10 Gbit/s.