Germanium near infrared detector on Silicon-on-Insulator
L. Colace, V. Sorianello, M. Balbi, and G. Assanto
Appl. Phys. Lett. 91, 021107 (2007)
Abstract:
The authors demonstrate near-infrared photodetectors in evaporated germanium on silicon-on-insulator waveguides. The authors achieve peak responsivities as high as 1 A/W and dark current densities as low as 40 nA at a reverse bias of 1 V. Owing to the low deposition temperature, this technology allows for simple and low cost monolithic integration with silicon.