Temperature-Dependence of Ge on Si p–i–n Photodetectors

L. Colace, M. Balbi, V. Sorianello and G. Assanto

J. Lightwave Techn. 26, 2211-2214 (2008)

Abstract:

We investigate the temperature dependence of germanium on silicon p-i-n photodetectors in terms of both dark current density and near-infrared responsivity. The dark current increases by nearly a factor 1.6 every 10°C, consistently with carrier generation in the space charge region. The responsivity has a complex trend, its temperature variation depending on wavelength and on the germanium quality. Detectors with a large defect density in the active layer exhibit a reduced responsivity as the temperature increases.