Near-Infrared Ge-on-Si power monitors monolithically integrated on SOI chips

L. Colace, V. Sorianello, M. Romagnoli and G. Assanto

IEEE Photon. Technol. Lett. 22, 658 (2010)

Abstract:

We realize and test power monitors monolithically integrated on silicon-on-insulator optical chips. The devices consist of near-infrared waveguide photodetectors in evaporated germanium with front-end transimpedance amplifiers. The power monitors operate with signals as small as 10 nW, with errors below 0.2\% and 2\% at 1 and 0.1 MuW, respectively