Near infrared photodetectors based on <100> silicon substrates

G. Masini, L. Colace, F. Galluzzi, and G. Assanto

Phylos. Mag. B 80, 791-797 (2000)


We report the fabrication of efficient near-infrared photodetectors based on polycrystalline germanium films on <100 > silicon. In view of integration with silicon electronics, the metal-semiconductor-metal photodiodes have been realised, for the first time to the best of our knowledge, by low-temperature evaporation. The experiments performed on non-optimised devices indicate a substantial sensitivity at both 1.32 and 1.55 Ám, with a responsivity as high as of 16mA/W at 1.32 Ám with 0.2V bias, and a time response of about 4 ns.