Germanium on Silicon p-i-n photodiodes for the near infrared

G. Masini, L. Colace, G. Assanto, H. C. Luan, and L. C. Kimerling

Electron. Lett. 36, 2095-2096 (2000)


We fabricated and characterized novel Ge on Silicon p-i-n photodetectors. The devices, designed by considering the defects at the Ge/Si interface, exhibit overall performances among the best available, with short-circuit responsivities as high as 0.4 A/W at 1.3 Ám, dark currents below 20mA/cm2 and response times shorter than 800ps.