Monolithic Integration of Near Infrared Ge Photodetectors with Si CMOS Readout Electronics

G. Masini, V. O. Cencelli, L. Colace, F. De Notaristefani, and G. Assanto

Appl. Phys. Lett. 80, 3268-3270 (2002)


Using a low-temperature technology for polycrystalline Ge deposition, we report on the monolithic integration of an array of near-infrared Ge photodiodes on Si complementary metal-oxide-semiconductor (CMOS) electronics. The integrated microsystem consists of a linear array of 120 x 120 Ám2 pixels, an analog CMOS multiplexer and a transimpedance amplifier. The resulting photoresponse covers the near-infrared up to 1.6 Ám.