High performance p-i-n Ge on Si photodetectors for the near infrared: from model to demonstration

G. Masini, L. Colace, G. Assanto, H.-C. Luan, K. Wada, and L.C. Kimerling

IEEE Trans. Electron. Dev. 48, 1092-1096 (2001)


We have investigated the integration of Ge p-i-n and n-i-p heterojunction photodiodes on Si. Recognizing the crucial role of interface defects at the Ge/Si interface on the performance of photodetectors, we have designed and fabricated high performance n-i-p Ge photodiodes on p+-Si substrates. These photodiodes exhibit short-circuit responsivities of 0.3 A/W at 1.3 Ám, 0.2 A/W at 1.55Ám, reverse dark currents of 20 mA/cm2 and response times of 800 ps.