High responsitivity near infrared Ge photodetectors integrated on Si

G. Masini, L. Colace, G. Assanto, H.-C. Luan, K. Wada, and L. C. Kimerling

Electron. Lett. 35, 1467-1468 (1999)

Abstract:

We have fabricated and tested heterojunction Ge/Si photodetectors based on pure Ge epitaxially grown on Si (001) using a two-step UHV-CVD process followed by cyclic thermal annealing. The detectors exhibit responsivities as high as 550 mA/W at 1.32 µ and 250 mA/W at 1.55 µ and response times shorter than 850ps.