Metal-Semiconductor-Metal Near Infrared Light Detector Based on Epitaxial Ge/Si

L. Colace, G. Masini, F. Galluzzi, G. Assanto, C. Capellini, L. Di Gaspare, E. Palange, and F. Evangelisti

Appl. Phys. Lett. 72, 3175-3177 (1998)


In this letter we report on a novel Metal - Semiconductor -Metal (MSM) photo-detector based on thick relaxed Ge layers, epitaxially grown on silicon after insertion of a low-temperature-grown Ge buffer layer. The detector shows a good responsivity at normal incidence at both 1.3 and 1.55 micron, with a maximum responsivity of 0.24 A/W at 1.3 micron under a 1 V bias. A response time of about 2ns has been measured.