2.5 Gbit/s polycristalline germanium on silicon photodetector operating from 1.3 to 1.55 micron

G. Masini, L. Colace, and G. Assanto

Appl. Phys. Lett. 82, 2524-2526 (2003)

Abstract:

We report on a fast polycrystalline germanium-on-silicon heterojunction photodetector for the near-infrared. The device exhibits a pulse response faster than 200 ps, allowing operation at 2.5 Gbit/s as testified by open eye diagrams. This polycrystalline device, with responsivities of 16 and 5 mA/W at 1.3 and 1.55 micron, respectively, and dark currents of 1 mA/cm2, is entirely integrable on standard silicon electronics and is an appealing low-cost candidate for fiber-to-the-home communication networks.