Form birefringence phase matching in multilayer semiconductor structures: Tuning and tolerances

A. De Rossi, V. Berger, G. Leo, and G. Assanto

IEEE J. Quantum Electron. 41, 1293-1302 (2005)


GaAs-Alox waveguide structures for parametric processes are analyzed in detail. The geometric tolerances of the structure are numerically calculated with reference to its parametric tuning. Finally, the tunability of GaAs-Alox based parametric devices versus temperature is investigated.