Guided-wave near-infrared detector in polycrystalline Germanium on Silicon

L. Colace, G. Masini, and G. Assanto

Appl. Phys. Lett. 87, 203507 (2005)


Using a guided wave configuration, we demonstrate a novel polyGe-on-Si heterostructure photodetector realized on a silicon-on-insulator by a low deposition temperature process. Without further detector optimization, at 1.55 Ám we measured wall-plug responsivities as high as 15 mA/W with an effective responsivity in excess of 300 mA/W. Device operation was demonstrated up to 2.5 Gbit/s.