Near-infrared camera in polycrystalline germanium integrated on complementary-metal-oxide semiconductor electronics

L. Colace, G. Masini, S. Cozza, G. Assanto, F. DeNotaristefani, and V. Cencelli

Appl. Phys. Lett. 90, 011103 (2007)


The authors demonstrate a two-dimensional array of Si-integrated photodetectors equipped with readout electronics and operating in the near infrared. The chip is realized in polycrystalline Ge on a silicon complementary metal oxide semiconductor circuitry and includes 512 pixels, 64 analog to digital converters, dark current cancellation, and test/calibration facilities. They describe its design, fabrication, characterization, and operation as a near-infrared image sensor.