Ge-on-Si photodetectors for optical receivers

L. Colace and G. Assanto

Int. J. Microw. Opt. Techn. 3 (3), 404-11 (2008)


We report on near infrared photodetectors based on germanium on silicon, for high-speed optical receivers. After summarizing design issues, we report recent results on pure-Ge-On-Si heteroepitaxy and discuss the link between material quality and device performance, with reference to recent achievements. Finally, we describe our approach to fast Ge/Si p-i-n detectors based on chemical vapor deposition. These detectors exhibit responsivities of 0.4 and 0.2 A/W at 1.3 and 1.55 Mum, respectively, and operate at 10 Gbit/s