Near-infrared absorption of Germanium thin films on Silicon

V. Sorianello, A. Perna, L. Colace, G. Assanto, H. C. Luan and L. C. Kimerling

Appl. Phys. Lett. 93, 111115 (2008)

Abstract:

Using differential optical absorption spectroscopy of germanium thin films epitaxially grown on silicon, we accurately evaluate the near-infrared absorption versus wavelength and temperature. The results allow for optimized design and realization of Ge-on-Si photodetectors.