Near-infrared absorption of Germanium thin films on Silicon

V. Sorianello, A. Perna, L. Colace, G. Assanto, H. C. Luan and L. C. Kimerling

Appl. Phys. Lett. 93, 111115 (2008)


Using differential optical absorption spectroscopy of germanium thin films epitaxially grown on silicon, we accurately evaluate the near-infrared absorption versus wavelength and temperature. The results allow for optimized design and realization of Ge-on-Si photodetectors.