Low Dark-Current Germanium-On-Silicon Near-Infrared Detectors

L. Colace, P. Ferrara, G. Assanto, D. Fulgoni and L. Nash

IEEE Photon. Technol. Lett. 19, 1813 (2007)


We demonstrate near-infrared Ge-on-Si photodiodes designed to minimize the dark current density and fabricated by chemical vapor deposition, The p-i-n detectors exhibit record low dark currents of 7 nA at -1 V reverse bias with responsivities close to the theoretical maximum. An excellent performance is ascertained even for very low reverse voltage.