Germanium-on-glass near-infrared detectors

L. Colace, V. Sorianello, A. De Iacovo, D. Fulgoni, J. Nash and G. Assanto

Electron. Lett. 45, 994 (2009)


Ge-on-glass photodetectors are fabricated by wafer bonding and ayer splitting, followed by the epitaxial growth of pn structures. The detectors exhiit a remarkaly low dark current density of 50 Mum/cm^2 at 1V reverse bias and responsivities as high as 0.33 and 0.43 A/W at 1.52 and 1.33 Mum, respectively. This approach can be readily extended to other substrates, enabling the integration of ge on different platforms