Curriculum Vitae
Prof. Colace received his MS ("Laurea") in Electronic Engineering from the University "La
Sapienza" in 1992. In 1997 he completed his PhD at the University "Roma Tre", worked as
Research Associate with the Department of Electronic Engineering at the University
"Roma Tre" since 2005 and he is currently Associate Professor at the Department of
Engineering. Prof. Colace teaches Fundamentals of Electronics since 2006 and
Photovoltaic devices and systems since 2013. He has also given courses in Solid State
Electronics, Precision Analog Electronics and Optoelectronics.
The research of Prof. Colace is focused on design, fabrication and characterization of
optoelectronic devices compatible with silicon technology and relevant to optical
communications, sensing, imaging and photovoltaics and includes the synthesis, analysis
and characterization of materials for optoelectronics. He investigates and develops Silicon
integrated functional devices for the near infrared based on both Ge/Si and PbS colloidal
quantum dots, Germanium and CIGS solar cells, and devices and techniques for near
infrared imaging, optoelectronic countermeasures and optical sensors for safety and
security. Prof. Colace established several agreements and collaborations with international
and national research centers as well as companies including Massachusetts Institute of
Technology, Center for Research and Education in Optics and Lasers (University of Central Florida), CNR-IFN, CNR-IMEM, CNR-IMEM, Agilent Technologies, Pirelli Labs,
Sensichips, Innodesi. Prof. Colace is member of: Institute of Electrical and Electronics
Engineers (IEEE), European Technology Platform for Photonics (Photonics21), Materials
Research Society (MRS), Istituto Nazionale di Fisica Nucleare (INFN), Consorzio
Nazionale Interuniversitario per le Telecomunicazioni (CNIT). He is member of scientific
and organizing committees of conferences and simposia and referee for several scientific
journals. Prof. Colace is author/coauthor of more than 200 publications, including refereed
scientific journals (81), international patents (4), book chapters (10), international (82) and
national (41) conference proceedings. He ranks with a “h-index” of 21 and total citations
amount to more than 1500 (Scopus, 01/2017).
Il Prof. Colace si è laureato in Ingegneria Elettronica nel 1992 e nel 1997 ha conseguito il
titolo di Dottore di Ricerca in Ingegneria all'Università di Roma Tre. Ha preso servizio nel
1998 come tecnico laureato e poi come ricercatore nel SSD ING-INF/01 presso il
Dipartimento di Ingegneria Elettronica dell'Università degli Studi Roma Tre nel 2005. Nel
dicembre 2012 ha preso servizio come Professore Associato presso Il Dipartimento di
Ingegneria della stessa Università. Insegna Elettronica I dal 2006 e Dispositivi e sistemi
fotovoltaici dal 2013. Ha insegnato inoltre Elettronica dello stato solido, Elettronica di
misura ed Optoelettronica. L'attività di ricerca del Prof. Colace verte prevalentemente su
progetto, realizzazione e caratterizzazione di dispositivi optoelettronici compatibili con la
tecnologia del silicio e rilevanti per sensoristica, comunicazioni ottiche, imaging e
fotovoltaico. In questo ambito ha sviluppato tecnologie e dispositivi in Germanio su Silicio
e più recentemente utilizzando quantum dot colloidali per la realizzazione di fotorivelatori
integrati operanti nel vicino infrarosso. Si occupa inoltre di celle solari in Germanio e in
CIGS, dispositivi e tecniche per l'imaging nel vicino infrarosso, contromisure
optoelettroniche per la difesa e sensori ottici per la sicurezza. Nell'ambito di tali attività ha
stabilito numerosi accordi e collaborazioni con enti di ricerca internazionali e nazionali a
aziende del settore come: Massachusetts Institute of Technology, Center for Research
and Education in Optics and Lasers (University of Central Florida), CNR-IMM, CNR-IMEM,
Masdar Institute of Science and Technology, Agilent Technologies, Pirelli Labs,
Sensichips, Innodesi. Il Prof. Colace è membro di varie organizzazioni tra cui: Institute of
Electrical and Electronics Engineers (IEEE), European Technology Platform for Photonics
(Photonics 21th), Materials Research Society (MRS), Istituto Nazionale di Fisica Nucleare
(INFN), Consorzio Nazionale Interuniversitario per le Telecomunicazioni (CNIT), è membro
di comitati scientifici di conferenze e simposi e revisore di articoli scientifici per varie riviste
internazionali. Il Prof. Colace è autore di oltre 200 lavori, inclusi riviste scientifiche
internazionali (81), brevetti internazionali (4), capitoli di libro (10), presentazioni a
conferenze internazionali (82) e nazionali (41), con un h-factor pari a 21 e oltre 1500
citazioni (Scopus, 01/2017).
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Publications
2019
- Voltage-tunable dual-band Ge/Si photodetector operating in VIS and NIR spectral range
- Optics Express Vol. 27, Issue 6, pp. 8529-8539 (2019)
- Optical Detection of Dangerous Road Conditions
- Sensors, 19(6), 1360 (2019)
2018
- Equivalent Circuit Model for Cu(In,Ga)Se2 Solar Cells Operating at Different Temperatures and Irradiance
- Electronics, 7(11), 324 (2018)
- A novel integrated smart system for indoor air monitoring and gas recognition
- IEEE International Conference on Smart Computing (SMARTCOMP 2018)
2017
- Noise performance of PbS colloidal quantum dot photodetectors
- Appl. Phys. Lett. Vol. 111, Iss. 21, 211104 (2017)
- PbS Colloidal Quantum Dot Visible-Blind Photodetector for Early Indoor Fire Detection
- IEEE Sensors Journal Vol. 17 Iss. 14 (2017)
- High Responsivity Fire Detectors based on PbS Colloidal Quantum Dot Photoconductors
- IEEE Photonics Technology Letters Vol. 29, Iss. 9 (2017)
2016
- PbS Colloidal Quantum Dot Photodetectors operating in the near infrared
- Scientific Reports 6, Article number: 37913 (2016)
- Near-infrared photodetectors based on PbS colloidal quantum dots
- Proc. SPIE 9899, Optical Sensing and Detection IV, 989908 (29 April 2016)
- Schottky Barrier Thin Film Transistor (SB-TFT) on low-temperature polycrystalline silicon
- Solid-State Electronics, 126, 1-4 (2016)
2015
- Document Low-temperature growth of single-crystal Cu(In,Ga)Se2 films by pulsed electron deposition technique
- Solar Energy Materials and Solar Cells Volume 133, February 2015, Pages 82-86
- High responsivity SiGe heterojunction phototransistor on silicon photonics platform
- Opt. Express 23(22), 28163-28169 (2015)
- Extraction of Schottky Barrier Parameters for Metal-Semiconductor Junctions on High Resistivity Inhomogeneous, Semiconductors
- Electron Devices, IEEE Transactions on 62 (2), 465-470
2014
- Single-crystal CuIn1-xGaxSe2 films grown on lattice-matched Ge by low-temperature Pulsed Electron Deposition technique
- 2014 Fotonica AEIT Italian Conference on Photonics Technologies, Fotonica AEIT 2014
- Investigation of Static and Dynamic Characteristics of Optically Controlled Field Effect Transistors
- Lightwave Technology, Journal of (Volume:32 , Issue: 12 )
- Design and simulation of optically controlled field effect transistors
- Phys. Status Solidi C 11, 81-84 (2014)
- Spin-On-Dopant Phosphorus diffusion in Germanium thin films for Near-Infrared detectors
- Phys. Status Solidi C 11, 57-60 (2014)
- TCAD simulation of thermally evaporated Germanium
- Phys. Status Solidi C 11, 69-72 (2014)
2013
- Germanium-on-glass solar cells: Fabrication and characterization
- Optical Materials Express Volume 3, Issue 2, 2013, Pages 216-228
- Document Three-dimensional Cu(InGa)Se\\bf 2 photovoltaic cells simulations: Optimization for limited-range wavelength applications
- IEEE Journal of Photovoltaics 3 (3), 6512045, pp. 1106-1112
- Optical road-ice detector operating in the near infrared
- Electron. Lett. 49 (5), 338-340 (2013)
- A near-infrared optoelectronic approach to detection of road conditions
- Optics and Lasers in Engineering 51 (5), 633-636 (2013)
- Near-Infrared Photodetectors in Evaporated Ge: Characterization and TCAD Simulations
- Electron Devices, IEEE Transactions on 60 (6) (2013)
- Germanium-on-Glass solar cells: fabrication and characterization
- Opt. Mater. Express 3 (2), 216-228 (2013)
2012
- High responsivity near-infrared photodetectors in evaporated Ge-on-Si
- Appl. Phys. Lett. 101, 081101 (2012)
2011
- Document Solar cells by Germanium layer transfer on glass
- 2011 10th International Conference on Environment and Electrical Engineering, EEEIC.EU 2011 - Conference Proceedings 5874708
- Germanium-on-glass solar cells
- IEEE International Conference on Group IV Photonics GFP 6053781, pp. 255-257
- Thermally evaporated single-crystal Germanium on Silicon
- Thin Solid Films 519, 8037-8040 (2011)
- Low-temperature germanium thin films on silicon
- Opt. Mater. Express 1 (5), 856-865 (2011)
- Optical power monitors in Ge monolithically integrated on SOI chips
- Microelectronic Engineering 88, 514–517 (2011)
- Thermal evaporation of Ge on Si for near infrared detectors: material and device characterization
- Microelectronic Engineering 88, 526–529 (2011)
- Micro-Raman characterization of Germanium thin films evaporated on various substrates
- Microelectronic Engineering 88, 492–495 (2011)
2010
- Germanium on Glass: A novel platform for light sensing devices
- IEEE Photon. J. 2 (5), 686-95 (2010)
- Near-Infrared Ge-on-Si power monitors monolithically integrated on SOI chips
- IEEE Photon. Technol. Lett. 22, 658 (2010)
- Germanium on insulator near-infrared photodetectors faricated by layer transfer
- Thin Solid Films 518, 2501 (2010)
2009
- Germanium-on-glass near-infrared detectors
- Electron. Lett. 45, 994 (2009)
- Guided-wave photodetectors in Germanium on optical chips in Silicon-On-Insulator
- J. Europ. Opt. Soc. Rap. Public. 4, 09030 (2009)
- Guided-wave photodetectors in germanium on SOI optical chips
- Physica E 41, 1090-1093 (2009)
- Analysis of temperature dependence of Ge-on-Si p-i-n photodetectors
- Physica E 41, 1086-1089 (2009)
2008
- Near-infrared absorption of Germanium thin films on Silicon
- Appl. Phys. Lett. 93, 111115 (2008)
- Near-Infrared p-i-n Ge-on-Si Photodiodes for Silicon Integrated Receivers
- J. Lightwave Techn. 26, 2954-2959 (2008)
- Temperature-Dependence of Ge on Si p–i–n Photodetectors
- J. Lightwave Techn. 26, 2211-2214 (2008)
- Ge-on-Si photodetectors for optical receivers
- Int. J. Microw. Opt. Techn. 3 (3), 404-11 (2008)
2007
- Low Dark-Current Germanium-On-Silicon Near-Infrared Detectors
- IEEE Photon. Technol. Lett. 19, 1813 (2007)
- Germanium near infrared detector on Silicon-on-Insulator
- Appl. Phys. Lett. 91, 021107 (2007)
- Guided-wave frequency doubling in surface periodically poled lithium niobate: competing effects
- J. Opt. Soc. Am. B 24, 1564-1570 (2007)
- Thin film Germanium on CMOS Silicon electronics for near infrared imaging
- Europhoton. 3, 28-30 (2007)
- A near infrared digital camera in polycrystalline Germanium integrated on Silicon
- IEEE J. Quantum Electron. 43, 311-315 (2007)
- Near-infrared camera in polycrystalline germanium integrated on complementary-metal-oxide semiconductor electronics
- Appl. Phys. Lett. 90, 011103 (2007)
2006
- Si-based near infrared photodetectors operating at 10 Gbit/s
- J. Lumin. 121, 413-416 (2006)
- Ge on Si p-i-n photodiodes operating at 10Gbit/s
- Appl. Phys. Lett. 88, 101111 (2006)
- Waveguide photodetectors for the near infrared in polycristalline germanium on silicon
- IEEE Photon. Techn. Lett. 18, 1094-1096 (2006)
2005
- Monolithic and hybrid near infrared detection and imaging based on poli-Ge photodiode arrays
- Opt. Mat. 27, 1079-1083 (2005)
- Guided-wave near-infrared detector in polycrystalline Germanium on Silicon
- Appl. Phys. Lett. 87, 203507 (2005)
2004
- Germanium on Silicon for light detection
- Encyclopedia of Nanoscience and Nanotechnology, Vol. 3, 829-842 (2004)
- Low-threshold spatial solitons in reverse-proton-exchanged periodically poled lithium niobate waveguides
- Opt. Lett. 29, 1778 (2004)
- Bi-colour spatial solitons in linearly uncoupled planar waveguides
- J. Opt. B: Quantum Semiclass. Opt. 6, S217-S222 (2004)
- Linear array of Si/Ge heterojunction photodetectors monolithically integrated with Silicon CMOS readout electronics
- IEEE J. Sel. Top. Quantum Electron. 10, 811-815 (2004)
2003
- Wavelength stabilizer for telecommunication lasers: design and optimization
- J. Lightwave Techn. 21, 1749-1757 (2003)
- Spatial optical simultons in nonlinearly coupled planar waveguides
- Opt. Lett. 28, 1031-1033 (2003)
- 2.5 Gbit/s polycristalline germanium on silicon photodetector operating from 1.3 to 1.55 micron
- Appl. Phys. Lett. 82, 2524-2526 (2003)
- A germanium photodetector array for the near infrared monolithically integrated with silicon CMOS readout electronics
- Physica E 16, 614-619 (2003)
2002
- Wavelength stabilization of semiconductor lasers with a tunable photodetector
- Appl. Phys. Lett. 80, 3039-3041 (2002)
- Si-based optoelectronics for communications
- Mat. Sci. Engin. B89, 2-9 (2002)
- Monolithic Integration of Near Infrared Ge Photodetectors with Si CMOS Readout Electronics
- Appl. Phys. Lett. 80, 3268-3270 (2002)
- High performance germanium-on-silicon detectors for optical communications
- Appl. Phys. Lett. 81, 586-588 (2002)
- Solid State wavemeter with InGaAsP/InGaAs two-diode heterostructure
- Electron. Lett. 38, 735-737 (2002)
2001
- Germanium thin films on silicon for detection of near-infrared light
- Handbook of Thin Films Materials, ed. H.S. Nalwa, Academic Press, (2001), p.327
- High Efficiency Photodetectors Based On High Quality Epitaxial Germanium Grown On Silicon Substrates
- Opt. Mater. 17, 71-73 (2001)
- Near Infrared Waveguide Photodetectors Based On Polycrystalline Ge on SOI Substrates
- Opt. Mater. 17, 243-246, (2001)
- High performance p-i-n Ge on Si photodetectors for the near infrared: from model to demonstration
- IEEE Trans. Electron. Dev. 48, 1092-1096 (2001)
2000
- Germanium on Silicon p-i-n photodiodes for the near infrared
- Electron. Lett. 36, 2095-2096 (2000)
- A solid-state near infrared spectrum analyzer based on polycrystalline Ge on Si
- Mat. Sci. Semicon. Proc. 3 , 545-549 (2000)
- Near infrared photodetectors based on <100> silicon substrates
- Phylos. Mag. B 80, 791-797 (2000)
- Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates
- Appl. Phys. Lett. 76, 1231-1233 (2000)
1999
- Advances in the field of poly-Ge on Si near infrared photodetectors
- Mat. Sci. Eng. B 69-70, 257-259 (1999)
- High responsitivity near infrared Ge photodetectors integrated on Si
- Electron. Lett. 35, 1467-1468 (1999)
- Ge-on-Si approaches to the detection of near infrared light
- IEEE J. Quantum Electron. 35, 1843-1852 (1999)
- Near infrared Wavemeter in Polycrystalline Germanium on Silicon
- Electron. Lett. 35, 1549-1551 (1999)
- Metal-Ge-Si heterostructures for near infrared light detection
- J. Vacuum Sci. Tech. B 17, 465-467 (1999)
1998
- Metal-Semiconductor-Metal Near Infrared Light Detector Based on Epitaxial Ge/Si
- Appl. Phys. Lett. 72, 3175-3177 (1998)
- Voltage-tunable near Infrared photodetector: Versatile component for optical communication systems
- J. Vacuum Sci. Tech. B 16, 2619-2622 (1998)
1997
- Voltage tunable SiGe photodetector: a novel tool for crypted optical communications through wavelength mixing
- Appl. Phys. Lett. 70, 3194-3196 (1997)
- Ge/Si (001) Photodetector for Near Infrared Light
- Solid State Phenomena 54, 55-58 (1997)
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