Nonlinear optics and optoelectronics Lab - Cubic nonlinear effects: self-focusing and modulation instability in glasses

Germanium on Silicon near-infrared detectors

Prof. Colace applied in this research topic for the last twenty years. Mainly, this research focuses on the development of photodetectors operating in the near infrared and integrated on silicon such as: ultrafast telecom photodiodes, optically controlled field effect transistors for optical chips interconnects, wavelength tunable photodiodes, solid state spectrometers, photodetectors and image sensors integrated on CMOS electronics. The research activity concerns material deposition and characterization (epitaxial Germanium on Silicon), and design, realization and characterization of the photodetectors. We developed several material growth techniques and original photodetector structures realizing devices for different applications and registering several international patents. Many efforts have been dedicated to the development of deposition methods and technologies compatible with standard processes for integrated electronics on silicon.

Funding:
NATO
Pirelli Labs, IT
Agenzia Spaziale Italiana
INFN Istituto Nazionale di Fisica Nucleare

Collaborations

CNR-IFN (Istituto di Fotonica e Nanotecnologie) Rome
CNR-IMEM (Istituto dei materiali per elettronica e il magnetismo) Rome
ANAS (Azerbaijan National Academy of Science)
MIT Massachussetts Institute of Technology, USA
Dep. Material Science, Washington State University USA
Pirelli Labs
PGT Photonics Ltd.

People

Gaetano Assanto, Lorenzo Colace, Vito Sorianello, Andrea De Iacovo

Related publications

2019

Voltage-tunable dual-band Ge/Si photodetector operating in VIS and NIR spectral range: Optics Express Vol. 27, Issue 6, pp. 8529-8539 (2019)

2015

High responsivity SiGe heterojunction phototransistor on silicon photonics platform: Opt. Express 23(22), 28163-28169 (2015)

2014

Spin-On-Dopant Phosphorus diffusion in Germanium thin films for Near-Infrared detectors: Phys. Status Solidi C 11, 57-60 (2014)
TCAD simulation of thermally evaporated Germanium: Phys. Status Solidi C 11, 69-72 (2014)

2013

Near-Infrared Photodetectors in Evaporated Ge: Characterization and TCAD Simulations: Electron Devices, IEEE Transactions on 60 (6) (2013)

2012

High responsivity near-infrared photodetectors in evaporated Ge-on-Si: Appl. Phys. Lett. 101, 081101 (2012)

2011

Thermally evaporated single-crystal Germanium on Silicon: Thin Solid Films 519, 8037-8040 (2011)
Low-temperature germanium thin films on silicon: Opt. Mater. Express 1 (5), 856-865 (2011)
Optical power monitors in Ge monolithically integrated on SOI chips: Microelectronic Engineering 88, 514–517 (2011)
Thermal evaporation of Ge on Si for near infrared detectors: material and device characterization: Microelectronic Engineering 88, 526–529 (2011)
Micro-Raman characterization of Germanium thin films evaporated on various substrates: Microelectronic Engineering 88, 492–495 (2011)

2010

Germanium on Glass: A novel platform for light sensing devices: IEEE Photon. J. 2 (5), 686-95 (2010)
Near-Infrared Ge-on-Si power monitors monolithically integrated on SOI chips: IEEE Photon. Technol. Lett. 22, 658 (2010)
Germanium on insulator near-infrared photodetectors faricated by layer transfer: Thin Solid Films 518, 2501 (2010)

2009

Germanium-on-glass near-infrared detectors: Electron. Lett. 45, 994 (2009)
Guided-wave photodetectors in Germanium on optical chips in Silicon-On-Insulator: J. Europ. Opt. Soc. Rap. Public. 4, 09030 (2009)
Guided-wave photodetectors in germanium on SOI optical chips: Physica E 41, 1090-1093 (2009)
Analysis of temperature dependence of Ge-on-Si p-i-n photodetectors: Physica E 41, 1086-1089 (2009)

2008

Near-infrared absorption of Germanium thin films on Silicon: Appl. Phys. Lett. 93, 111115 (2008)
Near-Infrared p-i-n Ge-on-Si Photodiodes for Silicon Integrated Receivers: J. Lightwave Techn. 26, 2954-2959 (2008)
Temperature-Dependence of Ge on Si p–i–n Photodetectors: J. Lightwave Techn. 26, 2211-2214 (2008)
Ge-on-Si photodetectors for optical receivers: Int. J. Microw. Opt. Techn. 3 (3), 404-11 (2008)

2007

Low Dark-Current Germanium-On-Silicon Near-Infrared Detectors: IEEE Photon. Technol. Lett. 19, 1813 (2007)
Germanium near infrared detector on Silicon-on-Insulator: Appl. Phys. Lett. 91, 021107 (2007)
Thin film Germanium on CMOS Silicon electronics for near infrared imaging: Europhoton. 3, 28-30 (2007)
A near infrared digital camera in polycrystalline Germanium integrated on Silicon: IEEE J. Quantum Electron. 43, 311-315 (2007)
Near-infrared camera in polycrystalline germanium integrated on complementary-metal-oxide semiconductor electronics: Appl. Phys. Lett. 90, 011103 (2007)

2006

Si-based near infrared photodetectors operating at 10 Gbit/s: J. Lumin. 121, 413-416 (2006)
Ge on Si p-i-n photodiodes operating at 10Gbit/s: Appl. Phys. Lett. 88, 101111 (2006)
Waveguide photodetectors for the near infrared in polycristalline germanium on silicon: IEEE Photon. Techn. Lett. 18, 1094-1096 (2006)

2005

Monolithic and hybrid near infrared detection and imaging based on poli-Ge photodiode arrays: Opt. Mat. 27, 1079-1083 (2005)
Guided-wave near-infrared detector in polycrystalline Germanium on Silicon: Appl. Phys. Lett. 87, 203507 (2005)

2004

Germanium on Silicon for light detection: Encyclopedia of Nanoscience and Nanotechnology, Vol. 3, 829-842 (2004)
Linear array of Si/Ge heterojunction photodetectors monolithically integrated with Silicon CMOS readout electronics: IEEE J. Sel. Top. Quantum Electron. 10, 811-815 (2004)

2003

2.5 Gbit/s polycristalline germanium on silicon photodetector operating from 1.3 to 1.55 micron: Appl. Phys. Lett. 82, 2524-2526 (2003)
A germanium photodetector array for the near infrared monolithically integrated with silicon CMOS readout electronics: Physica E 16, 614-619 (2003)

2002

Si-based optoelectronics for communications: Mat. Sci. Engin. B89, 2-9 (2002)
Monolithic Integration of Near Infrared Ge Photodetectors with Si CMOS Readout Electronics: Appl. Phys. Lett. 80, 3268-3270 (2002)
High performance germanium-on-silicon detectors for optical communications: Appl. Phys. Lett. 81, 586-588 (2002)

2001

Germanium thin films on silicon for detection of near-infrared light: Handbook of Thin Films Materials, ed. H.S. Nalwa, Academic Press, (2001), p.327
High Efficiency Photodetectors Based On High Quality Epitaxial Germanium Grown On Silicon Substrates: Opt. Mater. 17, 71-73 (2001)
Near Infrared Waveguide Photodetectors Based On Polycrystalline Ge on SOI Substrates: Opt. Mater. 17, 243-246, (2001)
High performance p-i-n Ge on Si photodetectors for the near infrared: from model to demonstration: IEEE Trans. Electron. Dev. 48, 1092-1096 (2001)

2000

Germanium on Silicon p-i-n photodiodes for the near infrared: Electron. Lett. 36, 2095-2096 (2000)
A solid-state near infrared spectrum analyzer based on polycrystalline Ge on Si: Mat. Sci. Semicon. Proc. 3 , 545-549 (2000)
Near infrared photodetectors based on <100> silicon substrates: Phylos. Mag. B 80, 791-797 (2000)
Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates: Appl. Phys. Lett. 76, 1231-1233 (2000)

1999

Advances in the field of poly-Ge on Si near infrared photodetectors: Mat. Sci. Eng. B 69-70, 257-259 (1999)
High responsitivity near infrared Ge photodetectors integrated on Si: Electron. Lett. 35, 1467-1468 (1999)
Ge-on-Si approaches to the detection of near infrared light: IEEE J. Quantum Electron. 35, 1843-1852 (1999)
Near infrared Wavemeter in Polycrystalline Germanium on Silicon: Electron. Lett. 35, 1549-1551 (1999)
Metal-Ge-Si heterostructures for near infrared light detection: J. Vacuum Sci. Tech. B 17, 465-467 (1999)

1998

Metal-Semiconductor-Metal Near Infrared Light Detector Based on Epitaxial Ge/Si: Appl. Phys. Lett. 72, 3175-3177 (1998)
Voltage-tunable near Infrared photodetector: Versatile component for optical communication systems: J. Vacuum Sci. Tech. B 16, 2619-2622 (1998)

1997

Voltage tunable SiGe photodetector: a novel tool for crypted optical communications through wavelength mixing: Appl. Phys. Lett. 70, 3194-3196 (1997)
Ge/Si (001) Photodetector for Near Infrared Light: Solid State Phenomena 54, 55-58 (1997)