Germanium on Silicon near-infrared detectors

Prof. Colace applied in this research topic for the last twenty years. Mainly, this research focuses on the development of photodetectors operating in the near infrared and integrated on silicon such as: ultrafast telecom photodiodes, optically controlled field effect transistors for optical chips interconnects, wavelength tunable photodiodes, solid state spectrometers, photodetectors and image sensors integrated on CMOS electronics. The research activity concerns material deposition and characterization (epitaxial Germanium on Silicon), and design, realization and characterization of the photodetectors. We developed several material growth techniques and original photodetector structures realizing devices for different applications and registering several international patents. Many efforts have been dedicated to the development of deposition methods and technologies compatible with standard processes for integrated electronics on silicon.

Pirelli Labs, IT
Agenzia Spaziale Italiana
INFN Istituto Nazionale di Fisica Nucleare


CNR-IFN (Istituto di Fotonica e Nanotecnologie) Rome
CNR-IMEM (Istituto dei materiali per elettronica e il magnetismo) Rome
ANAS (Azerbaijan National Academy of Science)
MIT Massachussetts Institute of Technology, USA
Dep. Material Science, Washington State University USA
Pirelli Labs
PGT Photonics Ltd.


Gaetano Assanto, Lorenzo Colace, Vito Sorianello, Andrea De Iacovo

Related publications


Voltage-tunable dual-band Ge/Si photodetector operating in VIS and NIR spectral range
Optics Express Vol. 27, Issue 6, pp. 8529-8539 (2019)


High responsivity SiGe heterojunction phototransistor on silicon photonics platform
Opt. Express 23(22), 28163-28169 (2015)


Spin-On-Dopant Phosphorus diffusion in Germanium thin films for Near-Infrared detectors
Phys. Status Solidi C 11, 57-60 (2014)

TCAD simulation of thermally evaporated Germanium
Phys. Status Solidi C 11, 69-72 (2014)


Near-Infrared Photodetectors in Evaporated Ge: Characterization and TCAD Simulations
Electron Devices, IEEE Transactions on 60 (6) (2013)


High responsivity near-infrared photodetectors in evaporated Ge-on-Si
Appl. Phys. Lett. 101, 081101 (2012)


Thermally evaporated single-crystal Germanium on Silicon
Thin Solid Films 519, 8037-8040 (2011)

Low-temperature germanium thin films on silicon
Opt. Mater. Express 1 (5), 856-865 (2011)

Optical power monitors in Ge monolithically integrated on SOI chips
Microelectronic Engineering 88, 514–517 (2011)

Thermal evaporation of Ge on Si for near infrared detectors: material and device characterization
Microelectronic Engineering 88, 526–529 (2011)

Micro-Raman characterization of Germanium thin films evaporated on various substrates
Microelectronic Engineering 88, 492–495 (2011)


Germanium on Glass: A novel platform for light sensing devices
IEEE Photon. J. 2 (5), 686-95 (2010)

Near-Infrared Ge-on-Si power monitors monolithically integrated on SOI chips
IEEE Photon. Technol. Lett. 22, 658 (2010)

Germanium on insulator near-infrared photodetectors faricated by layer transfer
Thin Solid Films 518, 2501 (2010)


Germanium-on-glass near-infrared detectors
Electron. Lett. 45, 994 (2009)

Guided-wave photodetectors in Germanium on optical chips in Silicon-On-Insulator
J. Europ. Opt. Soc. Rap. Public. 4, 09030 (2009)

Guided-wave photodetectors in germanium on SOI optical chips
Physica E 41, 1090-1093 (2009)

Analysis of temperature dependence of Ge-on-Si p-i-n photodetectors
Physica E 41, 1086-1089 (2009)


Near-infrared absorption of Germanium thin films on Silicon
Appl. Phys. Lett. 93, 111115 (2008)

Near-Infrared p-i-n Ge-on-Si Photodiodes for Silicon Integrated Receivers
J. Lightwave Techn. 26, 2954-2959 (2008)

Temperature-Dependence of Ge on Si p–i–n Photodetectors
J. Lightwave Techn. 26, 2211-2214 (2008)

Ge-on-Si photodetectors for optical receivers
Int. J. Microw. Opt. Techn. 3 (3), 404-11 (2008)


Low Dark-Current Germanium-On-Silicon Near-Infrared Detectors
IEEE Photon. Technol. Lett. 19, 1813 (2007)

Germanium near infrared detector on Silicon-on-Insulator
Appl. Phys. Lett. 91, 021107 (2007)

Thin film Germanium on CMOS Silicon electronics for near infrared imaging
Europhoton. 3, 28-30 (2007)

A near infrared digital camera in polycrystalline Germanium integrated on Silicon
IEEE J. Quantum Electron. 43, 311-315 (2007)

Near-infrared camera in polycrystalline germanium integrated on complementary-metal-oxide semiconductor electronics
Appl. Phys. Lett. 90, 011103 (2007)


Si-based near infrared photodetectors operating at 10 Gbit/s
J. Lumin. 121, 413-416 (2006)

Ge on Si p-i-n photodiodes operating at 10Gbit/s
Appl. Phys. Lett. 88, 101111 (2006)

Waveguide photodetectors for the near infrared in polycristalline germanium on silicon
IEEE Photon. Techn. Lett. 18, 1094-1096 (2006)


Monolithic and hybrid near infrared detection and imaging based on poli-Ge photodiode arrays
Opt. Mat. 27, 1079-1083 (2005)

Guided-wave near-infrared detector in polycrystalline Germanium on Silicon
Appl. Phys. Lett. 87, 203507 (2005)


Germanium on Silicon for light detection
Encyclopedia of Nanoscience and Nanotechnology, Vol. 3, 829-842 (2004)

Linear array of Si/Ge heterojunction photodetectors monolithically integrated with Silicon CMOS readout electronics
IEEE J. Sel. Top. Quantum Electron. 10, 811-815 (2004)


2.5 Gbit/s polycristalline germanium on silicon photodetector operating from 1.3 to 1.55 micron
Appl. Phys. Lett. 82, 2524-2526 (2003)

A germanium photodetector array for the near infrared monolithically integrated with silicon CMOS readout electronics
Physica E 16, 614-619 (2003)


Si-based optoelectronics for communications
Mat. Sci. Engin. B89, 2-9 (2002)

Monolithic Integration of Near Infrared Ge Photodetectors with Si CMOS Readout Electronics
Appl. Phys. Lett. 80, 3268-3270 (2002)

High performance germanium-on-silicon detectors for optical communications
Appl. Phys. Lett. 81, 586-588 (2002)


Germanium thin films on silicon for detection of near-infrared light
Handbook of Thin Films Materials, ed. H.S. Nalwa, Academic Press, (2001), p.327

High Efficiency Photodetectors Based On High Quality Epitaxial Germanium Grown On Silicon Substrates
Opt. Mater. 17, 71-73 (2001)

Near Infrared Waveguide Photodetectors Based On Polycrystalline Ge on SOI Substrates
Opt. Mater. 17, 243-246, (2001)

High performance p-i-n Ge on Si photodetectors for the near infrared: from model to demonstration
IEEE Trans. Electron. Dev. 48, 1092-1096 (2001)


Germanium on Silicon p-i-n photodiodes for the near infrared
Electron. Lett. 36, 2095-2096 (2000)

A solid-state near infrared spectrum analyzer based on polycrystalline Ge on Si
Mat. Sci. Semicon. Proc. 3 , 545-549 (2000)

Near infrared photodetectors based on <100> silicon substrates
Phylos. Mag. B 80, 791-797 (2000)

Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates
Appl. Phys. Lett. 76, 1231-1233 (2000)


Advances in the field of poly-Ge on Si near infrared photodetectors
Mat. Sci. Eng. B 69-70, 257-259 (1999)

High responsitivity near infrared Ge photodetectors integrated on Si
Electron. Lett. 35, 1467-1468 (1999)

Ge-on-Si approaches to the detection of near infrared light
IEEE J. Quantum Electron. 35, 1843-1852 (1999)

Near infrared Wavemeter in Polycrystalline Germanium on Silicon
Electron. Lett. 35, 1549-1551 (1999)

Metal-Ge-Si heterostructures for near infrared light detection
J. Vacuum Sci. Tech. B 17, 465-467 (1999)


Metal-Semiconductor-Metal Near Infrared Light Detector Based on Epitaxial Ge/Si
Appl. Phys. Lett. 72, 3175-3177 (1998)

Voltage-tunable near Infrared photodetector: Versatile component for optical communication systems
J. Vacuum Sci. Tech. B 16, 2619-2622 (1998)


Voltage tunable SiGe photodetector: a novel tool for crypted optical communications through wavelength mixing
Appl. Phys. Lett. 70, 3194-3196 (1997)

Ge/Si (001) Photodetector for Near Infrared Light
Solid State Phenomena 54, 55-58 (1997)