Andrea De Iacovo

Room n°15
Department of Engineering
University of Rome "Roma Tre"
Via della Vasca Navale, 84 - 00146 - Roma - Italy
tel. +39 06 5733 7084

Curriculum Vitae

Andrea De Iacovo (b. in Rome on 16/02/1988) in 2012 received his MSc degree ('Laurea Specialistica') in Electronic Engineering from University of Rome "Roma Tre" with a thesis entitled "Design and realization of Ge/Si photodetectors for optical communications". In 2013 he enrolled in a PhD program at the same university and in 2016 he obtained the PhD degree defending a dissertation on "Schottky barrier MOS polysilicon Thin Film Transistors"



PbS Colloidal Quantum Dot Visible-Blind Photodetector for Early Indoor Fire Detection
IEEE Sensors Journal Vol. 17 Iss. 14 (2017)

High Responsivity Fire Detectors based on PbS Colloidal Quantum Dot Photoconductors
IEEE Photonics Technology Letters Vol. 29, Iss. 9 (2017)


PbS Colloidal Quantum Dot Photodetectors operating in the near infrared
Scientific Reports 6, Article number: 37913 (2016)

Near-infrared photodetectors based on PbS colloidal quantum dots
Proc. SPIE 9899, Optical Sensing and Detection IV, 989908 (29 April 2016)

Schottky Barrier Thin Film Transistor (SB-TFT) on low-temperature polycrystalline silicon
Solid-State Electronics, 126, 1-4 (2016)


High responsivity SiGe heterojunction phototransistor on silicon photonics platform
Opt. Express 23(22), 28163-28169 (2015)

Extraction of Schottky Barrier Parameters for Metal-Semiconductor Junctions on High Resistivity Inhomogeneous, Semiconductors
Electron Devices, IEEE Transactions on 62 (2), 465-470


Single-crystal CuIn1-xGaxSe2 films grown on lattice-matched Ge by low-temperature Pulsed Electron Deposition technique
2014 Fotonica AEIT Italian Conference on Photonics Technologies, Fotonica AEIT 2014

Spin-On-Dopant Phosphorus diffusion in Germanium thin films for Near-Infrared detectors
Phys. Status Solidi C 11, 57-60 (2014)

TCAD simulation of thermally evaporated Germanium
Phys. Status Solidi C 11, 69-72 (2014)


Near-Infrared Photodetectors in Evaporated Ge: Characterization and TCAD Simulations
Electron Devices, IEEE Transactions on 60 (6) (2013)


High responsivity near-infrared photodetectors in evaporated Ge-on-Si
Appl. Phys. Lett. 101, 081101 (2012)


Germanium on insulator near-infrared photodetectors faricated by layer transfer
Thin Solid Films 518, 2501 (2010)


Germanium-on-glass near-infrared detectors
Electron. Lett. 45, 994 (2009)