Lorenzo Colace

Room n°2.28
Department of Engineering
University of Rome "Roma Tre"
Via Vito Volterra, 62 - 00146 - Roma - Italy
tel. +39 06 5733 7068
e-mail: colace@uniroma3.it



Curriculum Vitae



Prof. Colace received his MS ("Laurea") in Electronic Engineering from the University "La Sapienza" in 1992. In 1997 he completed his PhD at the University "Roma Tre", worked as Research Associate with the Department of Electronic Engineering at the University "Roma Tre" since 2005 and he is currently Associate Professor at the Department of Engineering. Prof. Colace teaches Fundamentals of Electronics since 2006 and Photovoltaic devices and systems since 2013. He has also given courses in Solid State Electronics, Precision Analog Electronics and Optoelectronics. The research of Prof. Colace is focused on design, fabrication and characterization of optoelectronic devices compatible with silicon technology and relevant to optical communications, sensing, imaging and photovoltaics and includes the synthesis, analysis and characterization of materials for optoelectronics. He investigates and develops Silicon integrated functional devices for the near infrared based on both Ge/Si and PbS colloidal quantum dots, Germanium and CIGS solar cells, and devices and techniques for near infrared imaging, optoelectronic countermeasures and optical sensors for safety and security. Prof. Colace established several agreements and collaborations with international and national research centers as well as companies including Massachusetts Institute of Technology, Center for Research and Education in Optics and Lasers (University of Central Florida), CNR-IFN, CNR-IMEM, CNR-IMEM, Agilent Technologies, Pirelli Labs, Sensichips, Innodesi. Prof. Colace is member of: Institute of Electrical and Electronics Engineers (IEEE), European Technology Platform for Photonics (Photonics21), Materials Research Society (MRS), Istituto Nazionale di Fisica Nucleare (INFN), Consorzio Nazionale Interuniversitario per le Telecomunicazioni (CNIT). He is member of scientific and organizing committees of conferences and simposia and referee for several scientific journals. Prof. Colace is author/coauthor of more than 200 publications, including refereed scientific journals (81), international patents (4), book chapters (10), international (82) and national (41) conference proceedings. He ranks with a “h-index” of 21 and total citations amount to more than 1500 (Scopus, 01/2017).


Il Prof. Colace si è laureato in Ingegneria Elettronica nel 1992 e nel 1997 ha conseguito il titolo di Dottore di Ricerca in Ingegneria all'Università di Roma Tre. Ha preso servizio nel 1998 come tecnico laureato e poi come ricercatore nel SSD ING-INF/01 presso il Dipartimento di Ingegneria Elettronica dell'Università degli Studi Roma Tre nel 2005. Nel dicembre 2012 ha preso servizio come Professore Associato presso Il Dipartimento di Ingegneria della stessa Università. Insegna Elettronica I dal 2006 e Dispositivi e sistemi fotovoltaici dal 2013. Ha insegnato inoltre Elettronica dello stato solido, Elettronica di misura ed Optoelettronica. L'attività di ricerca del Prof. Colace verte prevalentemente su progetto, realizzazione e caratterizzazione di dispositivi optoelettronici compatibili con la tecnologia del silicio e rilevanti per sensoristica, comunicazioni ottiche, imaging e fotovoltaico. In questo ambito ha sviluppato tecnologie e dispositivi in Germanio su Silicio e più recentemente utilizzando quantum dot colloidali per la realizzazione di fotorivelatori integrati operanti nel vicino infrarosso. Si occupa inoltre di celle solari in Germanio e in CIGS, dispositivi e tecniche per l'imaging nel vicino infrarosso, contromisure optoelettroniche per la difesa e sensori ottici per la sicurezza. Nell'ambito di tali attività ha stabilito numerosi accordi e collaborazioni con enti di ricerca internazionali e nazionali a aziende del settore come: Massachusetts Institute of Technology, Center for Research and Education in Optics and Lasers (University of Central Florida), CNR-IMM, CNR-IMEM, Masdar Institute of Science and Technology, Agilent Technologies, Pirelli Labs, Sensichips, Innodesi. Il Prof. Colace è membro di varie organizzazioni tra cui: Institute of Electrical and Electronics Engineers (IEEE), European Technology Platform for Photonics (Photonics 21th), Materials Research Society (MRS), Istituto Nazionale di Fisica Nucleare (INFN), Consorzio Nazionale Interuniversitario per le Telecomunicazioni (CNIT), è membro di comitati scientifici di conferenze e simposi e revisore di articoli scientifici per varie riviste internazionali. Il Prof. Colace è autore di oltre 200 lavori, inclusi riviste scientifiche internazionali (81), brevetti internazionali (4), capitoli di libro (10), presentazioni a conferenze internazionali (82) e nazionali (41), con un h-factor pari a 21 e oltre 1500 citazioni (Scopus, 01/2017).




Teaching


Electronics I
Photovoltaic devices and systems



Publications

2017

PbS Colloidal Quantum Dot Visible-Blind Photodetector for Early Indoor Fire Detection
IEEE Sensors Journal Vol. 17 Iss. 14 (2017)

High Responsivity Fire Detectors based on PbS Colloidal Quantum Dot Photoconductors
IEEE Photonics Technology Letters Vol. 29, Iss. 9 (2017)

2016

PbS Colloidal Quantum Dot Photodetectors operating in the near infrared
Scientific Reports 6, Article number: 37913 (2016)

Near-infrared photodetectors based on PbS colloidal quantum dots
Proc. SPIE 9899, Optical Sensing and Detection IV, 989908 (29 April 2016)

Schottky Barrier Thin Film Transistor (SB-TFT) on low-temperature polycrystalline silicon
Solid-State Electronics, 126, 1-4 (2016)

2015

Document Low-temperature growth of single-crystal Cu(In,Ga)Se2 films by pulsed electron deposition technique
Solar Energy Materials and Solar Cells Volume 133, February 2015, Pages 82-86

High responsivity SiGe heterojunction phototransistor on silicon photonics platform
Opt. Express 23(22), 28163-28169 (2015)

Extraction of Schottky Barrier Parameters for Metal-Semiconductor Junctions on High Resistivity Inhomogeneous, Semiconductors
Electron Devices, IEEE Transactions on 62 (2), 465-470

2014

Single-crystal CuIn1-xGaxSe2 films grown on lattice-matched Ge by low-temperature Pulsed Electron Deposition technique
2014 Fotonica AEIT Italian Conference on Photonics Technologies, Fotonica AEIT 2014

Investigation of Static and Dynamic Characteristics of Optically Controlled Field Effect Transistors
Lightwave Technology, Journal of (Volume:32 , Issue: 12 )

Design and simulation of optically controlled field effect transistors
Phys. Status Solidi C 11, 81-84 (2014)

Spin-On-Dopant Phosphorus diffusion in Germanium thin films for Near-Infrared detectors
Phys. Status Solidi C 11, 57-60 (2014)

TCAD simulation of thermally evaporated Germanium
Phys. Status Solidi C 11, 69-72 (2014)

2013

Germanium-on-glass solar cells: Fabrication and characterization
Optical Materials Express Volume 3, Issue 2, 2013, Pages 216-228

Document Three-dimensional Cu(InGa)Se\\bf 2 photovoltaic cells simulations: Optimization for limited-range wavelength applications
IEEE Journal of Photovoltaics 3 (3), 6512045, pp. 1106-1112

Optical road-ice detector operating in the near infrared
Electron. Lett. 49 (5), 338-340 (2013)

A near-infrared optoelectronic approach to detection of road conditions
Optics and Lasers in Engineering 51 (5), 633-636 (2013)

Near-Infrared Photodetectors in Evaporated Ge: Characterization and TCAD Simulations
Electron Devices, IEEE Transactions on 60 (6) (2013)

Germanium-on-Glass solar cells: fabrication and characterization
Opt. Mater. Express 3 (2), 216-228 (2013)

2012

High responsivity near-infrared photodetectors in evaporated Ge-on-Si
Appl. Phys. Lett. 101, 081101 (2012)

2011

Document Solar cells by Germanium layer transfer on glass
2011 10th International Conference on Environment and Electrical Engineering, EEEIC.EU 2011 - Conference Proceedings 5874708

Germanium-on-glass solar cells
IEEE International Conference on Group IV Photonics GFP 6053781, pp. 255-257

Thermally evaporated single-crystal Germanium on Silicon
Thin Solid Films 519, 8037-8040 (2011)

Low-temperature germanium thin films on silicon
Opt. Mater. Express 1 (5), 856-865 (2011)

Optical power monitors in Ge monolithically integrated on SOI chips
Microelectronic Engineering 88, 514517 (2011)

Thermal evaporation of Ge on Si for near infrared detectors: material and device characterization
Microelectronic Engineering 88, 526529 (2011)

Micro-Raman characterization of Germanium thin films evaporated on various substrates
Microelectronic Engineering 88, 492495 (2011)

2010

Germanium on Glass: A novel platform for light sensing devices
IEEE Photon. J. 2 (5), 686-95 (2010)

Near-Infrared Ge-on-Si power monitors monolithically integrated on SOI chips
IEEE Photon. Technol. Lett. 22, 658 (2010)

Germanium on insulator near-infrared photodetectors faricated by layer transfer
Thin Solid Films 518, 2501 (2010)

2009

Germanium-on-glass near-infrared detectors
Electron. Lett. 45, 994 (2009)

Guided-wave photodetectors in Germanium on optical chips in Silicon-On-Insulator
J. Europ. Opt. Soc. Rap. Public. 4, 09030 (2009)

Guided-wave photodetectors in germanium on SOI optical chips
Physica E 41, 1090-1093 (2009)

Analysis of temperature dependence of Ge-on-Si p-i-n photodetectors
Physica E 41, 1086-1089 (2009)

2008

Near-infrared absorption of Germanium thin films on Silicon
Appl. Phys. Lett. 93, 111115 (2008)

Near-Infrared p-i-n Ge-on-Si Photodiodes for Silicon Integrated Receivers
J. Lightwave Techn. 26, 2954-2959 (2008)

Temperature-Dependence of Ge on Si pin Photodetectors
J. Lightwave Techn. 26, 2211-2214 (2008)

Ge-on-Si photodetectors for optical receivers
Int. J. Microw. Opt. Techn. 3 (3), 404-11 (2008)

2007

Low Dark-Current Germanium-On-Silicon Near-Infrared Detectors
IEEE Photon. Technol. Lett. 19, 1813 (2007)

Germanium near infrared detector on Silicon-on-Insulator
Appl. Phys. Lett. 91, 021107 (2007)

Guided-wave frequency doubling in surface periodically poled lithium niobate: competing effects
J. Opt. Soc. Am. B 24, 1564-1570 (2007)

Thin film Germanium on CMOS Silicon electronics for near infrared imaging
Europhoton. 3, 28-30 (2007)

A near infrared digital camera in polycrystalline Germanium integrated on Silicon
IEEE J. Quantum Electron. 43, 311-315 (2007)

Near-infrared camera in polycrystalline germanium integrated on complementary-metal-oxide semiconductor electronics
Appl. Phys. Lett. 90, 011103 (2007)

2006

Si-based near infrared photodetectors operating at 10 Gbit/s
J. Lumin. 121, 413-416 (2006)

Ge on Si p-i-n photodiodes operating at 10Gbit/s
Appl. Phys. Lett. 88, 101111 (2006)

Waveguide photodetectors for the near infrared in polycristalline germanium on silicon
IEEE Photon. Techn. Lett. 18, 1094-1096 (2006)

2005

Monolithic and hybrid near infrared detection and imaging based on poli-Ge photodiode arrays
Opt. Mat. 27, 1079-1083 (2005)

Guided-wave near-infrared detector in polycrystalline Germanium on Silicon
Appl. Phys. Lett. 87, 203507 (2005)

2004

Germanium on Silicon for light detection
Encyclopedia of Nanoscience and Nanotechnology, Vol. 3, 829-842 (2004)

Low-threshold spatial solitons in reverse-proton-exchanged periodically poled lithium niobate waveguides
Opt. Lett. 29, 1778 (2004)

Bi-colour spatial solitons in linearly uncoupled planar waveguides
J. Opt. B: Quantum Semiclass. Opt. 6, S217-S222 (2004)

Linear array of Si/Ge heterojunction photodetectors monolithically integrated with Silicon CMOS readout electronics
IEEE J. Sel. Top. Quantum Electron. 10, 811-815 (2004)

2003

Wavelength stabilizer for telecommunication lasers: design and optimization
J. Lightwave Techn. 21, 1749-1757 (2003)

Spatial optical simultons in nonlinearly coupled planar waveguides
Opt. Lett. 28, 1031-1033 (2003)

2.5 Gbit/s polycristalline germanium on silicon photodetector operating from 1.3 to 1.55 micron
Appl. Phys. Lett. 82, 2524-2526 (2003)

A germanium photodetector array for the near infrared monolithically integrated with silicon CMOS readout electronics
Physica E 16, 614-619 (2003)

2002

Wavelength stabilization of semiconductor lasers with a tunable photodetector
Appl. Phys. Lett. 80, 3039-3041 (2002)

Si-based optoelectronics for communications
Mat. Sci. Engin. B89, 2-9 (2002)

Monolithic Integration of Near Infrared Ge Photodetectors with Si CMOS Readout Electronics
Appl. Phys. Lett. 80, 3268-3270 (2002)

High performance germanium-on-silicon detectors for optical communications
Appl. Phys. Lett. 81, 586-588 (2002)

Solid State wavemeter with InGaAsP/InGaAs two-diode heterostructure
Electron. Lett. 38, 735-737 (2002)

2001

Germanium thin films on silicon for detection of near-infrared light
Handbook of Thin Films Materials, ed. H.S. Nalwa, Academic Press, (2001), p.327

High Efficiency Photodetectors Based On High Quality Epitaxial Germanium Grown On Silicon Substrates
Opt. Mater. 17, 71-73 (2001)

Near Infrared Waveguide Photodetectors Based On Polycrystalline Ge on SOI Substrates
Opt. Mater. 17, 243-246, (2001)

High performance p-i-n Ge on Si photodetectors for the near infrared: from model to demonstration
IEEE Trans. Electron. Dev. 48, 1092-1096 (2001)

2000

Germanium on Silicon p-i-n photodiodes for the near infrared
Electron. Lett. 36, 2095-2096 (2000)

A solid-state near infrared spectrum analyzer based on polycrystalline Ge on Si
Mat. Sci. Semicon. Proc. 3 , 545-549 (2000)

Near infrared photodetectors based on <100> silicon substrates
Phylos. Mag. B 80, 791-797 (2000)

Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates
Appl. Phys. Lett. 76, 1231-1233 (2000)

1999

Advances in the field of poly-Ge on Si near infrared photodetectors
Mat. Sci. Eng. B 69-70, 257-259 (1999)

High responsitivity near infrared Ge photodetectors integrated on Si
Electron. Lett. 35, 1467-1468 (1999)

Ge-on-Si approaches to the detection of near infrared light
IEEE J. Quantum Electron. 35, 1843-1852 (1999)

Near infrared Wavemeter in Polycrystalline Germanium on Silicon
Electron. Lett. 35, 1549-1551 (1999)

Metal-Ge-Si heterostructures for near infrared light detection
J. Vacuum Sci. Tech. B 17, 465-467 (1999)

1998

Metal-Semiconductor-Metal Near Infrared Light Detector Based on Epitaxial Ge/Si
Appl. Phys. Lett. 72, 3175-3177 (1998)

Voltage-tunable near Infrared photodetector: Versatile component for optical communication systems
J. Vacuum Sci. Tech. B 16, 2619-2622 (1998)

1997

Voltage tunable SiGe photodetector: a novel tool for crypted optical communications through wavelength mixing
Appl. Phys. Lett. 70, 3194-3196 (1997)

Ge/Si (001) Photodetector for Near Infrared Light
Solid State Phenomena 54, 55-58 (1997)